High-power UV LED Packing Art.No.:LDUVA35WX06WL01

The nitride thermal conductive substrate can quickly conduct the heat of the chip; the highly transparent quartz glass package ensures efficient light output and enhances the stability of this series of products. The single chip structure is convenient for various array structures and optical designs, with high energy output and high reliability.

Features

-Single chip structure packaging;

-Aluminum nitride substrate, quartz hemispherical lens;

-High power output;

-High reliability and stability;

-Support any wavelength customization service.

Datasheet 1,174.8 KB/PDF

Packaging short form	SMD3535
Peak wavelength	415±2.5nm
Forward voltage	3.2-3.8V
Type forward current	500mA
Max forward current	750mA
Type Power	3W
Radiation energy	1180-1380mW
half view angle	60°
Package size	3.5*3.5mm
Packing Mat.	ALN+Quartz
Type	UVA

Specifications
Characteristics
Dimensional outline (unit: mm)

Specifications

Absolute Maximum Ratings

Items	Symbols	Ratings	Unit
Forward Current	If	<750	mA
Power Dissipation	Pd	3	W
Operating Temperature	Topr	-10~+85	°C
Storage Temperature	Tstg	-40~+100	°C
Junction Temperature	Tj	<125	°C
Soldering Temperature	JEDEC-J-STD-020D
ESD Classification	Class 2(JESD22-A114)

*1: The exposure to the absolute maximum rated conditions may affect device reliability.

*2: The Leds are not designed to be driven in reverse bias.

Electro-Optical Characteristics

Items	Symbol	Condition	Specification			Unit
Items	Symbol	Condition	Min	Typ.	Max	Unit
Forward Voltage	Vf	If=700mA	3.4	-	4.0	V
Radiant Flux	Øe		1180	-	1380	mW
Peak Wavelength	λp		410	415	420	nm
Spectrum Half width	△λ		/	10	/	nm
Viewing Angle	2θ1/2		/	60	/	deg
Thermal Resistance	Rth j-c		/	4.5	/	℃/W

*1: Thess values are measured by Raytron within the following tolerances:

※ Forward Voltage:±0.1V ※Peakwavelength:±3nm ※Radiant Flux:±10%;

*2: Some values may vary slightly depending on the conditions of the test equipments .

Characteristics

Opto-Electronic Characteristics

Characteristics(365-415nm)-1

※The above data is based on the test results of chip manufacturers, and will be updated continuously, and there will be iterative differences. Manufacturers have the right to explain.