3W High-power UV LED Packaging Structure (1 in 1) Art.No.:LDUVA35WX12WL00

Nitride Heat-conducting Substrate,Can quickly transmit the chip’s heat;Highly transparent, UV-resistant, one-piece molded silicone lens ensures efficient light output and enhances the stability of this series of products. High-power single-chip structure packaging and a large angle of 120° provide flexible convenience for optical design.

Features

-Single chip semiconductor packaging;

-High power and energy output;

-High reliability and stability;

-High light transmittance UV-resistant silicone lens, nitride substrate.

Datasheet 1,163.0 KB/PDF

Packaging short form	SMD3535
Peak wavelength	415±2.5nm
Forward voltage	3.2-3.8V
Type forward current	500mA
Max forward current	700mA
Type Power	3W
Radiation energy	1000-1360mW
half view angle	120°
Package size	3.5*3.5mm
Packing Mat.	ALN+Silicon
Type	UVA

Specifications
Characteristics
Dimensional outline (unit: mm)

Specifications

Absolute Maximum Ratings

Items	Symbols	Ratings	Unit
Forward Current	If	<700	mA
Power Dissipation	Pd	3	W
Operating Temperature	Topr	-10~+85	℃
Storage Temperature	Tstg	-40-+100	℃
Junction Temperature	Tj	<125	℃
Soldering Temperature	JEDEC-J-STD-020D
ESD Classification	Class 2(JESD22-A114)

*1: The exposure to the absolute maximum rated conditions may affect device reliability.

*2: The Leds are not designed to be driven in reverse bias.

Electro-Optical Characteristics

Items	Symbol	Condition	Specification			Unit
Items	Symbol	Condition	Min	Typ.	Max	Unit
Forward Voltage	Vf	If=700mA	3.2	-	3.8	V
Radiant Flux	Øe		1100	-	1360	mW
Peak Wavelength	λp		410	415	420	nm
Spectrum Half width	△λ		/	10	/	nm
Viewing Angle	2θ1/2		/	120	/	deg
Thermal Resistance	Rth j-c		/	4.5	/	℃/W

*1: Thess values are measured by Raytron within the following tolerances:

※ Forward Voltage:±0.1V ※Peakwavelength:±3nm ※Radiant Flux:±10%;

*2: Some values may vary slightly depending on the conditions of the test equipments .

Characteristics

Opto-Electronic Characteristics

Characteristics(365-415)-1.png

※The above data is based on the test results of chip manufacturers, and will be updated continuously, and there will be iterative differences. Manufacturers have the right to explain.